| 摘要 |
PROBLEM TO BE SOLVED: To markedly improve a semiconductor light emitting device in external quantum efficiency, by a method wherein a light takeout plane is turned rugged to be improved in light takeout efficiency so as to more efficiently take out light emitted from a light emitting part. SOLUTION: Projections 9 formed like semicylindridal lenses are provided on the surface of a P-type GaN layer 4. As mentioned above, in a light emitting device where the P-type GaN layer 4 is turned rugged, light obliquely incident on a light takeout plane is capable of passing through the light takeout plane corresponding to an angle which incident light makes with the rugged surface. Even the totally reflected light is repeatedly reflected, and when it is incident on the surface of the rugged part at a normal angle smaller than a critical angle, it is capable of passing through the light takeout plane. As a result, a semiconductor light emitting device can be markedly improved in efficiency to take out light emitted from an active layer 3, that is, in external quantum efficiency. |
