| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element that turns into an improved single mode, where no ripples are mixed onto FFP of a main laser beam. SOLUTION: A nitride semiconductor laser element is provided with an n-type contact layer 3 and an active layer 7 in multiple quantum well structure with a well layer that is made of InaGa1-aN (0<a<1), and a barrier layer that is made of InbGa1-bN (0<=b<1) between an n-type clad layer 5 that is made of a multilayer film layer with a nitride semiconductor containing Al and a p-type clad layer 10, that is made of a multilayer film layer with a nitride semiconductor containing Al on a substrate 1. Also, the laser element is provided with a light-absorbing layer 2, containing at least one layer of a first nitride semiconductor that is made of undoped IndGa1-dN (0<d<1), with a smaller band gap energy than that of the well layer between the n-type contact layer 3 and the substrate 1. |
