| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating an easily separable semiconductor element at high yield. SOLUTION: A low temperature buffer layer 2, a first high temperature buffer layer 3, a second high temperature buffer layer 4, an n-contact layer 5, an MQW light emitting layer 6 comprising an alternating laminate of quantum barrier layers 6a and quantum well layers 6b, a protective layer 7, a p-clad layer 8 and a p-contact layer 9 are grown sequentially on the surface of a sapphire substrate 1. A cut trench 50 is then made from the p-contact layer 9 to the sapphire substrate 1 by dicing. Subsequently, etching is performed from the p-contact layer 9 to the n-contact layer 5 on the inner surface of the cut trench 50 to form an n-side electrode forming region 51 where the n- contact layer 5 is exposed. |
