FULLY DEPLETED SOI ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A fully depleted SOI element and a method for manufacturing the SOI element are provided to make stable the operating character of the SOI element by electrically connecting a channel area to a silicon substrate grounded by a contact layer and a conductive layer. CONSTITUTION: An SOI(silicon on insulator) element has an SOI wafer consisting of a silicon substrate(11), an oxide layer(13) formed on the silicon substrate(11) and a silicon layer(16) formed on the oxide layer(13). A MOSFET consisting of a gate electrode(19) and a source/drain area(20) is formed on the silicon substrate(11). A conductive layer making contact with the oxide layer(13) is formed on one side of the silicon substrate(11). A conductive contact layer(15) electrically connects the conductive layer and a channel area(21). The method comprises the steps of forming the conductive layer and the oxide layer(13) on the silicon substrate(11). An isolation film(17) is formed on the oxide layer(13). The method comprises the steps of forming the gate electrode(19) and the source/drain area(20) on the silicon substrate(11).