REACTION FURNACE AND METHOD FOR FORMING SINGLE CRYSTAL SILICONE LAYER

摘要

PURPOSE: A reaction furnace to grow a single crystal silicone layer that has the wanted thickness on a silicone substrate and a method for forming a single crystal silicone layer using the furnace are provided. CONSTITUTION: A formation method of a single crystal silicone layer comprises the steps of: (i) supplying the silicone substrate wherein the pattern of an oxidation film is formed; (ii) washing to eliminate residual particles and natural oxidation film on the exposed silicone substrate; (iii) charging the silicone substrate into a reaction furnace; (iv) increasing temperature of the furnace to the set temperature, spraying source gas on the entire face of the silicone substrate to grow a single crystal silicone to a certain thickness only on the silicone substrate; (v) cooling temperature of the furnace to room temperature and fuzzing the inside; and (vi) repeating the fourth and the fifth step to form the wanted silicone layer.