发明名称 FABRICATION METHOD OF FERROELECTRIC CAPACITOR FOR ENHANCING INTERFACE CHARACTERISTICS
摘要 PURPOSE: A fabrication method of ferroelectric capacitor for enhancing interface characteristics is provided to reduce leakage current and prevent from detaching during following etching process. CONSTITUTION: A fabrication method of ferroelectric capacitor for enhancing interface characteristics comprises: a first step forming a first conductive film consisting lower electrodes of the capacitor; a second step a ferroelectric film on the first conductive film; a third step performing a rapid thermal annealing for generating a core of the ferroelectric film; a forth step forming a second conductive film consisting upper electrodes on the ferroelectric film; and a fifth step performing a heat treatment for growing grain size of the ferroelectric layer.
申请公布号 KR20000044676(A) 申请公布日期 2000.07.15
申请号 KR19980061175 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 YANG, WOO SEOK
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/108;H01L27/115;(IPC1-7):H01L27/10 主分类号 H01L27/04
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