发明名称 |
FABRICATION METHOD OF FERROELECTRIC CAPACITOR FOR ENHANCING INTERFACE CHARACTERISTICS |
摘要 |
PURPOSE: A fabrication method of ferroelectric capacitor for enhancing interface characteristics is provided to reduce leakage current and prevent from detaching during following etching process. CONSTITUTION: A fabrication method of ferroelectric capacitor for enhancing interface characteristics comprises: a first step forming a first conductive film consisting lower electrodes of the capacitor; a second step a ferroelectric film on the first conductive film; a third step performing a rapid thermal annealing for generating a core of the ferroelectric film; a forth step forming a second conductive film consisting upper electrodes on the ferroelectric film; and a fifth step performing a heat treatment for growing grain size of the ferroelectric layer.
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申请公布号 |
KR20000044676(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980061175 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
YANG, WOO SEOK |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/108;H01L27/115;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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