| 摘要 |
PROBLEM TO BE SOLVED: To realize a method of forming a titanium polycide gate which has satisfactory interface roughness between a polysilicon film and a titanium silicide film. SOLUTION: A method includes a step of successively forming a gate oxide film 22 and a doped polysilicon film 23, a step of implanting impurity ions into the surface of the polysilicon film, so that an amorphous silicon film 23a is formed on the surface of the polysilicon film, a step of forming an amorphous titanium silicide film 25 on the amorphous silicon film, a step of heat-processing the amorphous titanium silicide film and the amorphous silicon film, so that the amorphous titanium silicide film is subject to the phase transition to the crystalline titanium silicide film 25a and the amorphous silicon film is subjected to phase transition to the crystalline silicon film 23b, and a step of patterning the polysilicon film, including the crystal titanium silicide film and the crystalline silicon film and the gate oxide film.
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