| 摘要 |
PROBLEM TO BE SOLVED: To realize with a simple process a method which can manufacture a transistor, where the sheet resistance of the silicide film made at the gate electrode part is smaller than those of the silicide films made in the source/drain regions. SOLUTION: A silicide film is made by stacking a first high melting point metal 9 on the source/drain regions 7 and on the gate electrode 5, and then heat-treating them. At this time, a reactant with atmospheric gas at heat treatment is formed on the surface of the first high melting point metal layer 9. Next, the silicide film in the gate electrode 5 part is grown by stacking a second high melting point metal 19 and heat-treating it after the removal of the first high melting point metal, including the reactant on the gate electrode 5, and also the growth of the silicide film can be suppressed by utilizing the reactant on the source/drain regions 7 as a diffused blocking film of the second high melting point metal 19.
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