| 摘要 |
PROBLEM TO BE SOLVED: To prevent erroneous firing of a semiconductor element by switching the gate resistance of one semiconductor element being turned off when an on pulse is inputted to the gate of the other semiconductor element so that charging of the gate capacity due to voltage rise of the semiconductor element is suppressed. SOLUTION: When a P type voltage driven power semiconductor element 1 is turned on, a switch 7 short-circuits the gate resistance 3 of an N type voltage driven power semiconductor element 1 and the gate resistance is switched to zero. Consequently, charging of the gate capacity due to voltage rise of the power semiconductor element 1 can be suppressed when a flywheel diode 2 connected in parallel therewith is turned off in flywheel diode circulation mode and erroneous firing of the power semiconductor element 1 can be prevented.
|
