| 摘要 |
PROBLEM TO BE SOLVED: To prevent dopant from diffusing into an active layer during fabrication of a semiconductor light emitting element. SOLUTION: A method for fabricating a semiconductor light emitting element comprises a step for forming a p-type semiconductor layer having single or a plurality of layers, a light emitting layer of AlGaInP based semiconductor material, and an n-type semiconductor layer sequentially on a nondoped GaAs substrate 10 before forming an n-type GaP thick film layer 1, and a step for removing the nondoped GaAs substrate 10. Since a transparent substrate semiconductor light emitting element is fabricated without using a p-type substrate and a thick film layer, p-type dopant is prevented from being diffused into an active layer during high temperature processing and high internal quantum efficiency is sustained resulting in a high brightness semiconductor light emitting element. |
