| 摘要 |
PROBLEM TO BE SOLVED: To obtain a pattern forming method excellent in the coarse/fine dependency of a resist pattern formed using far ultraviolet ray, particularly ArF excimer laser beam and suitable for the light source of the short wave by using a specific acid degradable resin as a composition and a specific one as a developer. SOLUTION: A photoresist composition containing a resin containing a compound generating an acid by the irradiation with active light or radiation and the resin containing a repeating unit expressed by formula I or a repeating unit expressed by formula II and degraded by the action of the acid to increase the solubility in an alkali is applied on the substrate. The pattern forming method further contains a process for exposing the photoresist composition film with active light or radiation and developing with an organic alkali aq. solution. In the formula, each of R1-R8, R1'-R8' represents hydrogen atom, a (substituted) alkyl group, a group degraded by the acid or the like. The ratio of m/n is 1/9-9/1, each of m+n and m'+n' is 10-100 and each of (m') and (n') is 0-100. |
