| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent defective pixels from occurring by a method wherein a light blocking layer is arranged on an interlayer insulating film covering one of a pair of low-concentration impurity regions, formed of the same layer with a source/drain electrode, and then is separated from the source/drain electrode. SOLUTION: A polycrystalline silicon film 2 is formed on the surface of a non-alkaline plate 1, and a gate insulating film 3 and a gate electrode G are laminated on the intermediate surface of the silicon film 2. An interlayer insulating film 5 is arranged so as to cover the gate electrode G, and an electrode layer of single-layered or multilayered structure is formed thereon. One of a pair of regions 2b of low-impuirity concentration of the polycrystalline silicon film 2 is covered with a light blocking film 7b, and the light blocking film 7b is formed of the same layer with a source/drain electrode, 7a and separated from the source/drain electrode 7a. By this setup, defective pixels can be prevented from occurring even if a TFT substrate gets misaligned with a black matrix.</p> |
