| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of optimizing the pulse width of an ATD(address transition detection) pulse according to memory size. SOLUTION: At the same time when a decoding signal is generated by decoding an address input signal by a decoder 16, a detecting signal is generated by detecting the transition of the address input signal by an address transition detecting circuit 12, and a word enable-signal is made into active state by a control circuit 14 according to this detecting signal. Then at the same time, when a word line corresponding to a decoding signal is driven by a word driver according to this word enable-signal, a dummy word line is driven by a dummy word driver, and a word enable-signal is made into a non-active state by detecting that a dummy word line has become an active state. |
