| 摘要 |
PROBLEM TO BE SOLVED: To realize a capacitor for obtaining fine capacitance with sufficient precision and satisfactory yield, and a method for manufacturing the capacitor. SOLUTION: A lower electrode 2, a dielectric layer 3, an upper electrode 4, and a first nitride layer 5 having a function as a mask at etching the upper electrode 4 and hydrogen barrier performance are laminated on a substrate in this order. The first nitride layer 5, the upper electrode 4, and the dielectric layer 3 having functions as a mask at etching the lower electrode 2 are coated with a second nitride film 7 having hydrogen barrier performance, and they are provided with a contact hole put through the first nitride film 5 and the second nitride film 7 to extend from the surface of the upper electrode 4 to the upper part. In this case, the contact hole, the second nitride film 7, and the lower electrode 2 are coated with an insulating film 10. |
