| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to suppress the variations in the threshold voltage of thin-film transistors(TFTs) to a lower level by setting the width of the irradiation of a laser beam wider than the spacings between source followers and at an integral number of times of the spacings between the source followers. SOLUTION: The source followers are parallel connected by two pieces each in parallel to the progression direction of the laser beam. When the spacings between the source followers is defined as (d) and the irradiation width of the laser beam as L=3d, the source followers within the regions shown by diagonal lines are eventually irradiated with the laser beam twice but the source followers within the drop-out regions are eventually irradiated with the laser beam just once. Then, two kinds of the source followers varying in the threshold voltage form each other are eventually formed alternately or at every plural pieces in the progressing direction of the laser beam. The length in the overlap portions of the irradiation region of the laser beam is set at an integral number of times of the width (d) of the source followers, by which the source followers varying in the irradiation quantity of the laser beam may be regularly arrayed and manufactured with respect to the moving direction of the laser beam.</p> |
