| 摘要 |
PROBLEM TO BE SOLVED: To improve element isolation property in an element isolating process using an insulating film. SOLUTION: In a LOCOS (local oxidation of silicon) isolating method, when a mask nitride film 3 which is etched off for element isolation remains on an element isolating region 5, an element isolating oxide film 27 which has a width in accord with a design value can be obtained at the formation of the element isolating film by removing the remaining nitride film 6 completely, at the same time as with wet-etching the underlying oxide film 2 on the element isolating region.
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