| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device whose transistor, etc., will not be broken down due to a voltage boosted by a boosting circuit in a burn-in test. SOLUTION: Charge pump circuits 1 to 8, a decision circuit 28, and a clock generating circuit 26, which constitute a boosting circuit for word lines built in a memory chip, are decentralized and arranged. The charge pump circuits 1 to 3 are arranged on the left-side part of a looped boosted voltage line 24, and the charge pump circuits 4 to 8 are arranged at the right-side part. The charge pump circuits 1 and 4 have small pumping capabilities and the charge pump circuits 2, 3, 5, 6, 7, and 8 have large pumping capabilities. In burn-in test mode, the charge pump circuits 2, 3, 5, 6, 7, and 8 are stopped from being driven with a burn-in mode signal.
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