| 摘要 |
PROBLEM TO BE SOLVED: To maintain high performance of the MISFET of a logic circuit, and to reduce the leakage currents of the selected MISFET of a DRAM memory cell. SOLUTION: A gap-insulating film and a gate electrode 17 are formed on the main face of a semiconductor substrate 1, and a sidewall 21 is formed on substrate sidewall, and the semiconductor substrate 1 is oxidized in a state such that a cap-insulating film is present on the gate electrode 17 and a silicon oxide film 22 can be formed. Afterwards, the cap-insulating film is selectively removed, and the silicon oxide film 22 in second and third regions B and C is etched by using a photoresist film, and the silicon oxide film 22 is allowed to be left only on a source/drain in a first area A. A silicide technique is used in this state so that a silicide film 29 can be formed on the gate electrode 17 in the first, second, and third regions A, B, and C, and on the source/drain in the second and third regions B and C. |
