| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove electron beam contamination simultaneously with ion milling by utilizing etching selectivity at the time of ion milling, by including oxygen in ions to be used in ion milling. SOLUTION: In a method for analyzing the internal structure of a sample, first of all, a scanning electron microscope image in the primary state is photographed in a scanning electron microscope 1. Then, a sample pretreatment chamber 2 is evacuated up to a prescribed degree of vacuum by a vacuum pump 7. After closing a valve 10, oxygen gas 9 is supplied into the sample pretreatment chamber 2 by using an oxygen gas supply means 6, and the degree of vacuum in the sample pretreatment chamber 2 is adjusted in a prescribed range. Then, a high voltage is applied on an ion gun 5 by using a high voltage power source, to thereby generate oxygen gas ion. The generated gaseous oxygen ions are contacted with the sample surface and execute polishing of the sample 4, but the whole surface is not polished uniformly. First of all, the gaseous oxygen ions react with contamination on the sample surface produced when photographing the scanning electron microscope 1, and then removes the contamination selectively.</p> |
