| 摘要 |
PROBLEM TO BE SOLVED: To ensure a solid-state image sensor of a sufficient dynamic range by a method wherein a first conductivity first transistor and a second conductivity second transistor are connected to the first electrode of a capacitor that stores charge generated by a photodetector. SOLUTION: The anode of a photodiode 10 is grounded, and the cathode of the photodiode 10 is connected to the source of an N-channel MOS transistor 12. The one electrode of a capacitor 14, the input of an output amplifier 16, the source of an N-channel MOS transistor 18, and the drain of a P-channel MOS transistor 20 are connected to the drain of the N-channel MOS transistor 12, and the other electrode of the capacitor 14 is grounded. The drain of the N-channel MOS transistor 18 and the source of the P-channel MOS transistor 20 are connected to a power supply voltage VD. By this setup, a solid-state image sensor of this constitution can be ensured of a sufficient dynamic range.
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