发明名称 METHOD OF REDUCING RESIST REFLECTANCE IN LITHOGRAPHY
摘要 <p>PROBLEM TO BE SOLVED: To improve the control of important dimensions by depositing a multilayer ARC laminate layer which combines the absorption and diminishing interference modes together. SOLUTION: An antireflective coat(ARC) layer 130 is formed on a substrate 110. This layer is a multilayer ARC layer composed of a first and second ARC layers 135, 140. The second ARC layer 140 is deposited on the first ARC layer 135 which is deposited on the substrate 110. A resist 170 is formed on the second ARC layer wherein the first ARC layer operates in the absorption mode and the second ARC layer operates in the diminishing interference mode, the refractive index of the second ARC layer is selected so as to minimize the reflection on the resist, the first ARC layer 135 has an adequate extinction coefficient k and wall thickness for absorbing lights and the coefficient k is about 0.2 or more, pref. 0.5 or more.</p>
申请公布号 JP2000195791(A) 申请公布日期 2000.07.14
申请号 JP19990375486 申请日期 1999.12.28
申请人 INFINEON TECHNOL NORTH AMERICA CORP 发明人 CHIIAN RUU;SHAOMIN IN
分类号 H01L21/027;G03F7/09;G03F7/11 主分类号 H01L21/027
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