| 摘要 |
<p>PROBLEM TO BE SOLVED: To stabilize the operating characteristics of a semiconductor element by a method wherein a transistor main body provided in each unit cell is electrically coupled with a conductive layer. SOLUTION: A conductive layer 12 is formed in a silicon substrate 11, a buried oxide film 13 having first and second contact holes 14a and 14b is formed on the layer 12 to form contact layers 15a and 15b in the holes 14a and 14b formed in the film 13 in such a way that the layers 15a and 15b come into contact with the conductive layer 12 and a silicon layer 16 is formed on the film 13 including the contact layers. Element isolation films 17 are formed, a gate 19 is formed on an element formation region on the layer 16 on the layer 15a to form source and drain regions 20 and 21 on both sides of the gate 19, and an impurity region 23 for well pickup is formed at a prescribed part in the layer 16 in such a way as to come into contact with the layer 15b. Accordingly, a prescribed bias is applied to each transistor main body through the contact layers and the conductive layer, so the stabilization of the operating characteristics of an element can be attained.</p> |
