| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce damage to a base layer due to plasma by a method wherein at least one buffer layer out of buffer layers, which respectively have an optical gap lower than a specified value and exist between the P-type semiconductor layer and the intrinsic semiconductor layer and between the N-type semiconductor layer and the intrisic semiconductor layer in a semiconductor layer, is provided in the semiconductor layer. SOLUTION: A semiconductor layer 150 consists of an N-type semiconductor layer 151, an intrinsic semiconductor layer 152 and a P-type semiconductor layer 153. At least one buffer layer is provided in the layer 150. That is, a buffer layer 550A with the optical gap (Egb) to satisfy the condition of Egp< Egb<=1.05×(Egi) is provided between the layers 153 and 152, and a buffer layer 550B with the optical gap (Egb) to satisfy the condition of Egn<Egb<=1.05×(Egi) is provided between the N-type semiconductor layers 151 and the intrinsic semiconductor layer 152.</p> |
