| 摘要 |
PROBLEM TO BE SOLVED: To realize a solid-state image sensing device which is enhanced in sensitivity to infrared rays and numerical aperture by a method wherein a charge storage part is formed inside a semiconductor layer, an inversion layer is formed on a part of the charge storage part, and a drain electrode is formed on the inversion layer to transfer the charge stored in the charge storage part. SOLUTION: A charge storage layer 14 which generates and stores the signal charge is formed in a region isolated by a P-type element isolation layer 12 on a P-type semiconductor substrate 10, and a P-type first inversion layer 15 is formed on the surface part of a part of the charge storage layer 14. An N-type drain electrode 31b of polysilicon is formed so as to be connected to the P-type first inversion layer 15 through the intermediary of a contact Cl. As mentioned above, the signal charge generated deep inside the substrate 10 is stored in the charge storage layer 14 without being swept away like in a vertical overflow drain, and the charge stored in the charge storage layer 14 is transferred.
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