| 摘要 |
PROBLEM TO BE SOLVED: To constitue accurately a semiconductor device, having at least two FETs having different threshold voltages and also realize improved reliability thereof, even when at least one of the FETs is constituted of a MODFET. SOLUTION: This semiconductor device is constituted of at least two transistors of first and second field-effect transistors having different threshold voltages formed on a common substrate 31, and first and second gate junctions of p-n junctions J1 and J2 having different depths in impurity introducting regions 261 and 262 formed in gate parts of the first and second field-effect transistors respectively.
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