| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable trench structure of semiconductor device which has a gate-insulating film free of BT(bias temperature) and long in TDDB life time, and its manufacturing method. SOLUTION: This is a semiconductor device which at least possesses a semiconductor substrate 1 equipped with a trench for element isolation, a gate insulating film 7 having three-layer structure of a first oxide film, a nitride film, and a second oxide film in order from trench side, made on the trench, and the gate electrode 8 buried in the trench, and in which the thickness reduced to oxide film basis of the three-layer structure of gate insulating film 7 is 25-35 nm, and its manufacturing method.
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