发明名称 PATTERN FORMING METHOD OF LIGHT EMITTER VAPOR DEPOSITED FILM
摘要 PROBLEM TO BE SOLVED: To obtain a heat resisting insulating film by irradiating a photosensitive resin film pattern after exposure with ultraviolet ray under heating and providing a process by a specific heating condition. SOLUTION: A photosensitive resin composition is applied on a substrate and after being exposed into pattern state, the resin film obtained by film forming is developed and next, a light emitter is vapor deposited on the substrate having the resultant film pattern. In the pattern forming method of the light emitter vapor deposited film, the photosensitive resin film pattern after exposure is irradiated with ultraviolet ray under heating and the heating condition is (1) (the heat resisting temperature of the film pattern -10 deg.C)<=(the heating starting temperature)<(the heat resisting temperature of the film pattern), (2) (the heat resisting temperature of the film pattern)<=(heating finishing temperature)<=(the heat resisting temperature of the film pattern +10 deg.C) and the pattern of the light emitter vapor deposited film is formed through (3) a process, in which the temperature from the starting of heating to the finishing of heating is within±10 deg.C of the heat resisting temperature of the film pattern.
申请公布号 JP2000194143(A) 申请公布日期 2000.07.14
申请号 JP19990294176 申请日期 1999.10.15
申请人 NIPPON ZEON CO LTD 发明人 KASHIWAGI MOTOFUMI;KUSUNOKI TETSUAKI
分类号 C08J7/04;C09K11/02;C23C14/24;G03F7/40;H01L51/50;H05B33/10;H05B33/12;H05B33/14;(IPC1-7):G03F7/40 主分类号 C08J7/04
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