| 摘要 |
PROBLEM TO BE SOLVED: To dispense with a LOCOS process and to protect a photodiode against damage by a method wherein a gate insulating film and an oxide film are deposited on a substrate, and a conductive pattern is formed and buried in the gate channel penetrating through the gate insulating film and the oxide film. SOLUTION: A gate insulating film 2 is deposited on a semiconductor substrate 1 and thermally oxidized into a thermal oxide film, and ions are implanted through the intermediary of the thermal oxide film for formation of a channel stopper 3, a photodiode 4, and a drain 5. Then, a CVD oxide film 6 and a resist film are deposited, and then the CVD oxide film 6 and the gate oxide film 2 are etched through a mask so as to bore a gate channel 7 in the CVD oxide film 6. In succession, a polysilicon gate electrode 8 is deposited thereon so as to be filled into the gate channel 7, and the gate electrode 8 is processed by reactive ion etching into a pattern larger than the gate channel 7 so as to form a polysilicon wiring pattern.
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