| 摘要 |
PROBLEM TO BE SOLVED: To accelerate write-in operation by enhancing the on-resistance of a first sense amplifier drive transistor at a write-in operation time more than that at a read-out operation time. SOLUTION: By making the gate potential of a sense amplifier drive transistor 613 N for supplying a driver source to an N channel side source node of a sense amplifier 614 SA lower than that at the write-in operation time, the on-resistance of the sense amplifier drive transistor 613 N is enhanced, and the drive power of the sense amplifier 614 SA becomes weaker than that at the write-in operation time. Thus, the data stored in the sense amplifier 614 SA are inverted easily at the write-in operation time, and the inversion is accelerated. The write-in to the sense amplifier 614 SA is accelerated, and the data of bit line pair BLO, /BLO are inverted at high speed, and a column selection signal CSL is inactivated at high speed.
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