| 摘要 |
PROBLEM TO BE SOLVED: To reliably form a shallow diffused region in a semiconductor substrate in a low-energy ion implantation process by a method, wherein an oxide film is removed from the surface of the silicon substrate prior to ion implantation. SOLUTION: Impurities in the surface of an Si substrate are removed by cleaning the substrate in an ammonia/hydrogen peroxide, and thereafter an oxide film on the surface of the substrate is removed by immersing the substrate in a dilute hydrofluoric acid. Thereby, the surface of the substrate is exposed. Moreover, ions of desired dose are implanted on the surface of the substrate with prescribed acceleration energy, and furthermore, B which remains on the surface of the substrate is removed. The implanted ions are activated by rapid heating. In this manner, when a shallow junction is formed on the substrate in a low-energy ion implantation process, it becomes possible to form a shallow diffused region on the substrate by performing ion implantation on the substrate, in a state in which the oxide film is removed from the surface of the substrate.
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