| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can suppress the occurrence of hot carriers by lightening the strong electric field in the vicinity of a drain. SOLUTION: N-impurities implanted regions 6s and 6d are made within the main face of a p-type silicon substrate 1 where a gate electrode 5 is not made, and then a TEOS oxide film 7 is accumulated over the entire surface. Sidewalls 8s and 8d, which have vertical planes are made by switching the etching conditions such as pressure, gas flow, etc., into the conditions for strengthening the sidewall deposit after anisotropically dry-etching the TEOS oxide film 7, leaving it for a specified thickness h1, and then by continuing the anisotropic dry etching of the TEOS oxide film 7. Next, n+ impurity implantated regions 9s and 9d are made within the main face of the p-type silicon substrate 1 by implanting arsenic ions into the p-type silicon substrate 1, with the gate electrode 5 and the side walls 8s and 8d.
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