| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device and a manufacture thereof, that has an improved charge holding property in charge storage layers, which store data such as a floating gate, etc. SOLUTION: There are provided a semiconductor substrate 10, having a channel formation region, a first charge storage layer 30a formed at least on top of the channel formation region, a control gate 31a formed of top of the first charge storage layer, a second charge storage layer 32a formed on the semiconductor substrate at least at the position opposed to the side surface of the first charge storage layer while being insulated from the first charge storage layer, and source/drain regions 11, 12 formed in connection with a channel forming region in the semiconductor substrate at both side parts of the control gate.
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