| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a field insulating film which prevents the deterioration of an element and also enable the flattening of a field oxide film, in the manufacture of a semiconductor device which includes the formation process of the field insulating film. SOLUTION: This manufacture has a process of forming a first oxide film 22 on a semiconductor substrate 21, a process of forming an opening 22a by removing the first oxide film 22 on an active region from among the semiconductor substrate 21, a process of forming a buffer oxide film 25 on the semiconductor substrate 21 through the opening 22a, a process of forming a silicon nitride film 26 on the buffer oxide film 25 and the first oxide film 22, a process of patterning the silicon nitride film 26 and leaving it selectively on, at least, the buffer layer 25, and a process of oxidizing the semiconductor substrate 21 in the region which is not covered with the silicon nitride film 26 and forming an field oxide film 28.
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