| 摘要 |
PROBLEM TO BE SOLVED: To provide a small size, a high capacity and a high moisture resistance to a thin film capacitor and reduce the capacitance increase ratio in moisture absorption by flowing the vapor of an org. silane through a microwave electromagnetic field to form an org. silane before and after forming an Al deposition layer. SOLUTION: An org. silane compd. is introduced in vacuum through a capillary 1g at a fixed flow rate, its vapor flows through a microwave electromagnetic field to activate the vapor which forms a first org. silane layer as an org. silane compd. reaction product on an outermost layer 1k, an org. monomer film having two or more vinyl groups is formed on the surface of the first org. silane layer, an electron beam is irradiated on the front face to form an org. monomer polymerized layer, a second org. silane compd. is introduced in vacuum through a capillary 5g at a fixed flow rate and gasified, resultant vapor flows through a second microwave electromagnetic field to activate the vapor which forms a second org. silane layer as a second org. silane compd. reaction product on the surface of the org. monomer polymerized layer.
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