| 摘要 |
An improved method of forming a metallization layer in a layer stack is disclosed. In one aspect of the invention, a method of performing a lithographic damascene etch on a layer stack to form a metal line is disclosed. The layer stack, which is disposed above a substrate, is comprised of an underlying layer. The method of performing the lithographic damascene etch comprises the steps of depositing a photoresist layer above the layer stack and forming a trench in the photoresist layer so that the trench is positioned over the underlying layer of the layer stack. The method continues with depositing a metal layer over the top surface of the photoresist layer and filling the trench, planarizing the metal layer down to about a level of the top surface of the photoresist layer to define a top surface of a metal line, and removing the photoresist layer to leave gaps around the metal line. A dielectric material is then deposited to fill the gaps around the metal line up to a level of about the top surface of the metal line.
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