发明名称 Ferromagnetic layer material, useful for a magnetic storage medium, comprises a bismuth-manganese film epitaxially grown on a substrate
摘要 A ferromagnetic layer material, comprises a bismuth and manganese containing film (2, 3) epitaxially grown on a substrate (1). An Independent claim is also included for production of the above ferromagnetic layer material. Preferred Features: The film is formed on a single crystal or polycrystalline substrate by a vapor, sputter and/or molecular beam epitaxy (MBE) deposition process comprising simultaneous epitaxial growth of bismuth (Bi) and manganese (Mn) or comprising epitaxial growth of a Bi-rich film, deposition of a Mn-rich film and heat treating at 150-300 deg C.
申请公布号 DE19900447(A1) 申请公布日期 2000.07.13
申请号 DE19991000447 申请日期 1999.01.08
申请人 SCHOENES, JOACHIM;HARDER, KAI UWE;MENZEL, DIRK 发明人 SCHOENES, JOACHIM;HARDER, KAI UWE;MENZEL, DIRK
分类号 G11B5/64;G11B5/66;G11B5/85;G11B5/851;H01F10/12;H01F10/28;(IPC1-7):H01F10/12;H01F41/16 主分类号 G11B5/64
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