发明名称 |
Ferromagnetic layer material, useful for a magnetic storage medium, comprises a bismuth-manganese film epitaxially grown on a substrate |
摘要 |
A ferromagnetic layer material, comprises a bismuth and manganese containing film (2, 3) epitaxially grown on a substrate (1). An Independent claim is also included for production of the above ferromagnetic layer material. Preferred Features: The film is formed on a single crystal or polycrystalline substrate by a vapor, sputter and/or molecular beam epitaxy (MBE) deposition process comprising simultaneous epitaxial growth of bismuth (Bi) and manganese (Mn) or comprising epitaxial growth of a Bi-rich film, deposition of a Mn-rich film and heat treating at 150-300 deg C.
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申请公布号 |
DE19900447(A1) |
申请公布日期 |
2000.07.13 |
申请号 |
DE19991000447 |
申请日期 |
1999.01.08 |
申请人 |
SCHOENES, JOACHIM;HARDER, KAI UWE;MENZEL, DIRK |
发明人 |
SCHOENES, JOACHIM;HARDER, KAI UWE;MENZEL, DIRK |
分类号 |
G11B5/64;G11B5/66;G11B5/85;G11B5/851;H01F10/12;H01F10/28;(IPC1-7):H01F10/12;H01F41/16 |
主分类号 |
G11B5/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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