| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a semiconductor device having a quantum dot for controlling the luminous wavelength of the quantum dot, and its manufacturing method. SOLUTION: A semiconductor device is composed of a semiconductor substrate 10, a buffer layer 12 that is formed on the semiconductor substrate 10 while a lattice constant near the surface differs from that near the interface with the semiconductor substrate 10, and a quantum dot that is formed on the buffer layer 12 while a luminous wavelength is stipulated by a lattice constant near the surface of the buffer layer 12. |
