| 摘要 |
PROBLEM TO BE SOLVED: To restrain the energy of quantum dots from being affected by a temperature change by a method wherein the quantum dots are formed on the surface of a substrate and covered with a first semiconductor crystal layer, and furthermore the quantum dots and the first semiconductor crystal layer are covered with a second semiconductor crystal layer. SOLUTION: A GaAs buffer layer 15 is grown on a GaAs substrate 11, and many InAs quantum dots 12 are formed on the top surface of the buffer layer 15. An InAs layer 12a thinner than the quantum dot 12 is present around the quantum dots 12, and gaseous trimethyl indium, triethyl gallium, and arsine are supplied onto the surfaces of the InAs layer 12a and the quantum dots 12 to form a first distortion relaxing layer 13 of semiconductor crystal, by which the quantum dots 12 are buried in the distortion relaxing Layer 13. Thereafter, gaseous triethyl gallium and arsine are supplied to the distortion relaxing layer 13 so as to form A GaAs coating layer 14 on the distortion relaxing layer 13. |
