| 摘要 |
PROBLEM TO BE SOLVED: To attain high output with a high speed transfer rate by providing a thin film device such as a narrow gap magnetic head. SOLUTION: A magneto-resistive film 11 is laminated in the predetermined thickness, a high resistance film 12 is laminated thereon in the predetermined thickness, a first thin film 21 is laminated on the high resistance film 12, this thin film 21 is selectively etched to form a gap 22 in the predetermined interval, a second thin film is then laminated on the entire surface from the upper side of the thin film 21 including the gap and the first thin film 21 is laminated again thereon. Thereafter, the second thin film is removed by the etching process to form a mask 20 having the narrow gap corresponding to thickness of the second thin film. Using this mask 30, etching is performed to remove the high resistance film 12 and magneto-resistive film 11 in the width corresponding to the narrow gap. Thereby, a bias film 13 is formed within at least the narrow gap of the magneto-resistive film 11 and the electrode is laminated thereon to the entire surface and then etched to form the electrode layer 14.
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