| 摘要 |
PROBLEM TO BE SOLVED: To realize a method of forming a gate electrode with which an abnormal oxidizing phenomenon of metal can be prevented, without increasing the required quality of heat and deterioration of a gate insulating film, in the gate reoxidizing step. SOLUTION: A method includes a step of forming a gate insulating film 21 on a semiconductor wafer and forming a polysilicon film 22 on the gate insulation film 21, a step of forming an anti-diffusion layer on the polysilicon film 22, a step of forming a metal film 24 made of a metal capable of forming a conductive metal oxidizing film 26b when oxidized on the anti-diffusion film, a step of selectively etching the metal film 24, the anti-diffusion film and the polysilicon film 22 to form a gate electrode pattern, and a step of performing a gate reoxidizing process on the overall structure of the semiconductor wafer.
|
