| 摘要 |
PROBLEM TO BE SOLVED: To realize a method for manufacturing an SOI wafer for improving uniformity of the thickness of a semiconductor layer, using an oxidizing process and a wet etching process instead of a CMP process. SOLUTION: This method for manufacturing an SOI wafer comprises a stage for providing a base substrate 11 and a semiconductor substrate, a stage for forming an insulating film 12 on the base substrate 11, a stage for forming a boron ion layer in the semiconductor substrate by a prescribed depth from one side face, a stage for bonding the base substrate 11 with the semiconductor substrate for bringing the insulating layer 12 into contact with one side face of the semiconductor substrate, a stage for grinding the other side face of the semiconductor substrate to the part adjacent to the boron ion layer, a stage for etching the ground other side face of the semiconductor substrate for exposing the boron ion layer, a stage for forming an oxide film 12 by thermally oxidizing one part of the semiconductor substrate including the boron ion layer, and a stage for forming a semiconductor layer 21a by etching the oxide film.
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