发明名称 LARGE AREA PLASMA SOURCE
摘要 A chamber housing (2) enclosing a plasma region (10) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32), and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (32); and sealing members (40, 40', 42, 42') forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).
申请公布号 WO0040771(A1) 申请公布日期 2000.07.13
申请号 WO1999US27928 申请日期 1999.12.10
申请人 TOKYO ELECTRON LIMITED;JOHNSON, WAYNE, L. 发明人 JOHNSON, WAYNE, L.
分类号 H05H1/46;B01J19/08;C23C16/00;C23C16/507;H01J37/32;H01L21/205;H01L21/26;H01L21/302;H01L21/306;H01L21/3065;H01L21/42;H05H1/00;(IPC1-7):C23C16/00 主分类号 H05H1/46
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