发明名称 LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD
摘要 A light emitting diode (GaAsp LED) is made of gallium phosphide arsenide GaAsp mixed crystal and its light intensity is much improved compared with conventional ones. The light emitting diode has a pellet whose main surface is made of a GaAsp mixed crystal ans is rough.
申请公布号 WO0041249(A1) 申请公布日期 2000.07.13
申请号 WO1999JP06533 申请日期 1999.11.24
申请人 SHIN-ETSU HANDOTAI CO., LTD.;SUZUKI, KINGO;IKEDA, HITOSHI 发明人 SUZUKI, KINGO;IKEDA, HITOSHI
分类号 H01L33/22;H01L33/30;(IPC1-7):H01L33/00 主分类号 H01L33/22
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