发明名称 SPIN DEPENDENT TUNNELING SENSOR
摘要 <p>A magnetic field sensor having a junction structure (23) in a sensor (21, 22) cell using a dielectric intermediate separating material (14) with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film (12, 13) which is also on a base eelctrode (11', 12, 13), and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-films (15, 16, 17) but of differing rotational responses (18) to external magnetic fields. Similar structures have a separated film (15, 16, 17) in each that can be interconnected to one another with the interconnections (25) extending at least in part substantially parallel to the widths of the separated films (15, 16, 17), and the separated films (15, 16, 17) can have lengths with gradually narrowing widths to the ends thereof as can the base electrode (11', 12, 13). One or more planar coils (27, 29) can be supported at least in part on the separated films (15, 16, 17).</p>
申请公布号 WO0041250(A1) 申请公布日期 2000.07.13
申请号 WO2000US00039 申请日期 2000.01.03
申请人 NONVOLATILE ELECTRONICS, INCORPORATED 发明人 DAUGHTON, JAMES, M.;TONDRA, MARK, C.;POHM, ARTHUR, V.
分类号 G01R33/06;G11B5/39;H01L43/08;(IPC1-7):H01L43/00 主分类号 G01R33/06
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