| 摘要 |
PROBLEM TO BE SOLVED: To reduce dust generated by the exposure of a film deposited on a deposition preventive board to plasma and to improve the yield of the device by allowing only the part remarkable in the increase of temp. in the deposition preventive board with a jacket structure and introducing high temp. liq. therein. SOLUTION: A deposition preventive board 12 is loaded around a substrate 1 and a planar target 2 in such a manner that a film is not deposited on a chamber 8. The deposition preventive board 12 has a cooling jacket part 16, and in which high temp. liq. can be introduced. Desirably, the lower limit of the temp. of the liq. to be introduced is controlled to 50 deg.C, and the upper limit is controlled to 80 to 85% of the decomposing temp. of the material of the planar target 2. Hot water heated at 70 deg.C is introduced into the cooling jacket part 16, and reactive gas such as argon and oxygen is introduced therein via a valve 7. With zinc sulfate+quartz weak in bonding strength as the planar target 2, discharge is executed by high frequency magnetron sputtering. Since its temp. does not reach the decomposing temp. of the material owing to the cooling effect, the film stuck to the deposition preventive board 12 is not decomposed, the desorption of the film caused by film stress and thermal stress is reduce as well, and dust is reduce.
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