发明名称 |
Methods for removal of an anti-reflective coating following a resist protect etching process |
摘要 |
A method is provided for removing an bottom anti-reflective coating (BARC) from a transistor gate following at least one etch back process associated with a spacer formation and/or subsequent resistor protect etching process or processes. The method eliminates the need to use HF acid in the stripping process by substantially reducing the thickness of the BARC during each of the etching back processes, such that, only a thin layer of BARC material remains that can be easily removed with phosphoric acid.
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申请公布号 |
US6087271(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19970993869 |
申请日期 |
1997.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EN, WILLIAM G.;NGO, MINH VAN;KARLSSON, OLOV B.;LYONS, CHRISTOPHER F.;CHAN, MARIA CHOW |
分类号 |
H01L21/027;H01L21/311;H01L21/336;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/027 |
代理机构 |
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地址 |
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