| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a flare light due to aluminum corrosion by moisture, ions or the like and interference at a protecting film surface and an LSED chip surface and, form an LED array without reducing a quantity of light emitted from a thyristor by forming a humidity-resistant and ion-resistant protecting film on an aluminum wring part except the emitting thyristor. SOLUTION: A p-type layer 2, an n-type layer 3, a p-type layer 4 and an n-type layer 5 are layered to a P-type GaAs substrate 1, thereby constituting a pnpn-type thyristor. An AuGeNi film 6 and an Au film 7 are formed on the layers. An Au film 8 is connected to a gate electrode, and an Al wiring 9 is connected. An SiO2 insulating film 10 is covered. A moisture-resistant and ion- resistant projecting film 11 not passing light is set at the Al wiring part except an optical thyristor emitting a light 12. One or more transmission thyristors are arranged in an array, in parallel to which one or more emission thyristors are arranged similarly in an array. Gates of the transmission and emission thyristors are connected, thereby forming a self-scanning type LED array.
|
