SILICON CARBIDE COMPOSITE MATERIAL AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To inexpensively obtain an Al-SiC or Cu-SiC type silicon carbide composite material having a high heat conductivity and useful for a heat radiation substrate, particularly a semiconductor device. SOLUTION: The silicon carbide composite material contains an Al or Cu- base metal as a 1st component and silicon carbide-base particles as a 2nd component and has 10-20% porosity and >=170 W/m.K heat conductivity. Starting materials including the 1st and 2nd components are mixed and compacted. The resulting compact is heated at a temperature below the melting point of the Al- or Cu-base metal in a vacuum of <=1×10-3 Torr atmospheric pressure and then it is sintered at the melting point of the base metal of the 1st component or above. Since the compacting is carried out at a lower pressure than the conventional pressure, the service life of dies is prolonged and the silicon carbide composite material is inexpensively produced.