发明名称 |
Method of manufacturing a CMOS Transistor |
摘要 |
The method of manufacturing a CMOS transistor according to the present invention comprises the steps of forming a field oxide at a selected region on a semiconductor substrate to isolate a first region for a NMOS transistor from a second region for a PMOS transistors; forming a P-well region and a N-well region in the first and second regions, respectively; forming a gate oxide film and a gate electrode on selected regions of the first and second regions; implanting low concentration N-type impurities ions to form low concentration impurity implantation regions within the first and second regions; forming spacers at said side walls of the gate electrode and the gate oxide film; forming a high concentration implantation region in the first and second regions; and implanting N-type impurity ions into the second region to form a punch stop doping layer below said low concentration impurity implantation region of the second region.
|
申请公布号 |
US6087210(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19990325343 |
申请日期 |
1999.06.04 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES |
发明人 |
SOHN, YONG SUN |
分类号 |
H01L21/265;H01L21/8238;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|