发明名称 |
Word line non-boosted dynamic semiconductor memory device |
摘要 |
A memory array is divided into memory blocks each including a predetermined number of rows, and voltages on storage nodes are boosted by changing cell plate voltages in the memory block including a selected word line. An unselected word line is held at a negative voltage level when the selected word line is driven to a power supply voltage level. Thereby, it is possible to prevent movement of charges due to connection of a bit line with the storage node at the time of change in cell plate voltage of an unselected memory cell, and destruction of data in the unselected memory cell can be prevented. A dynamic semiconductor memory device not requiring a boosted voltage is provided.
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申请公布号 |
US6088286(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19980159617 |
申请日期 |
1998.09.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAUCHI, TADAAKI;ARIMOTO, KAZUTAMI |
分类号 |
G11C11/407;G11C11/401;G11C11/404;G11C11/4074;G11C11/408;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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